H5N5016PL-E0-E MOSFET. Datasheet pdf. Equivalent

   Type Designator: H5N5016PL-E0-E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm
   Package: TO-264

H5N5016PL-E0-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

H5N5016PL-E0-E Datasheet (PDF)

..1. Size:146K renesas
h5n5016pl-e0-e.pdf

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1.

5.1. Size:153K renesas
rej03g0175 h5n5016pl.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:69K renesas
rej03g0378 h5n5012p.pdf