All MOSFET. INJ0203BC1 Datasheet

 

INJ0203BC1 Datasheet and Replacement


   Type Designator: INJ0203BC1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SC-59
 

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INJ0203BC1 Datasheet (PDF)

 ..1. Size:151K  isahaya
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INJ0203BC1

INJ0203BC1 Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5

 7.1. Size:151K  isahaya
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INJ0203BC1

INJ0203AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

 9.1. Size:214K  isahaya
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INJ0203BC1

INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNITmmINJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6machinery, because of low voltage drive and low on resistance. MARKINGS D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele

Datasheet: INJ0002AU1 , INJ0003AC1 , INJ0003AM1 , INJ0003AU1 , INJ0011AC1 , INJ0011AM1 , INJ0011AU1 , INJ0203AC1 , IRFP064N , INJ0212AP1 , INJ0303AC1 , INJ0312AC1 , INJ0312AP1 , INK0001AC1 , INK0001AM1 , INK0001AU1 , INK0001BC1 .

History: 2SK3676-01L

Keywords - INJ0203BC1 MOSFET datasheet

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