INJ0203BC1
MOSFET. Datasheet pdf. Equivalent
Type Designator: INJ0203BC1
Marking Code: J8
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SC-59
INJ0203BC1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
INJ0203BC1
Datasheet (PDF)
..1. Size:151K isahaya
inj0203bc1.pdf
INJ0203BC1 Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5
7.1. Size:151K isahaya
inj0203ac1.pdf
INJ0203AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.
9.1. Size:214K isahaya
inj0212ap1.pdf
INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNITmmINJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6machinery, because of low voltage drive and low on resistance. MARKINGS D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele
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