INJ0203BC1 Datasheet. Specs and Replacement

Type Designator: INJ0203BC1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC-59

INJ0203BC1 substitution

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INJ0203BC1 datasheet

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INJ0203BC1

INJ0203BC1 Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5... See More ⇒

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INJ0203BC1

INJ0203AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. ... See More ⇒

 9.1. Size:214K  isahaya
 inj0212ap1.pdf pdf_icon

INJ0203BC1

INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT mm INJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6 machinery, because of low voltage drive and low on resistance. MARKING S D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele... See More ⇒

Detailed specifications: INJ0002AU1, INJ0003AC1, INJ0003AM1, INJ0003AU1, INJ0011AC1, INJ0011AM1, INJ0011AU1, INJ0203AC1, AO4468, INJ0212AP1, INJ0303AC1, INJ0312AC1, INJ0312AP1, INK0001AC1, INK0001AM1, INK0001AU1, INK0001BC1

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