INK0102AC1 Datasheet and Replacement
Type Designator: INK0102AC1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SC-59
INK0102AC1 substitution
INK0102AC1 Datasheet (PDF)
ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf
INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT
Datasheet: INK0003AM1 , INK0003AU1 , INK0010AC1 , INK0010AM1 , INK0010AU1 , INK0012AC1 , INK0012AM1 , INK0012AU1 , IRFP250N , INK0102AM1 , INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 .
History: JCS730SC | FHU100N03C | IPS80R600P7 | SMG2328 | EFC2K103NUZ | HYG035N02KA1C2 | 2SK1772
Keywords - INK0102AC1 MOSFET datasheet
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History: JCS730SC | FHU100N03C | IPS80R600P7 | SMG2328 | EFC2K103NUZ | HYG035N02KA1C2 | 2SK1772
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