INK0102AM1 PDF and Equivalents Search

 

INK0102AM1 Specs and Replacement

Type Designator: INK0102AM1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SC-70

INK0102AM1 substitution

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INK0102AM1 datasheet

 ..1. Size:153K  isahaya
 ink0102ac1 ink0102am1 ink0102au1.pdf pdf_icon

INK0102AM1

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 8.1. Size:150K  isahaya
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 9.1. Size:205K  isahaya
 ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf pdf_icon

INK0102AM1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT... See More ⇒

 9.2. Size:109K  isahaya
 ink011bap1.pdf pdf_icon

INK0102AM1

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Detailed specifications: INK0003AU1, INK0010AC1, INK0010AM1, INK0010AU1, INK0012AC1, INK0012AM1, INK0012AU1, INK0102AC1, 2N7000, INK0102AU1, INK0103AC1, INK0103AM1, INK0103AU1, INK0112AC1, INK0112AM1, INK0112AU1, INK011BAP1

Keywords - INK0102AM1 MOSFET specs

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