All MOSFET. INK0103AC1 Datasheet

 

INK0103AC1 Datasheet and Replacement


   Type Designator: INK0103AC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: SC-59
 

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INK0103AC1 Datasheet (PDF)

 ..1. Size:150K  isahaya
 ink0103ac1 ink0103am1 ink0103au1.pdf pdf_icon

INK0103AC1

 8.1. Size:153K  isahaya
 ink0102ac1 ink0102am1 ink0102au1.pdf pdf_icon

INK0103AC1

 9.1. Size:205K  isahaya
 ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf pdf_icon

INK0103AC1

INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT

 9.2. Size:109K  isahaya
 ink011bap1.pdf pdf_icon

INK0103AC1

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Datasheet: INK0010AM1 , INK0010AU1 , INK0012AC1 , INK0012AM1 , INK0012AU1 , INK0102AC1 , INK0102AM1 , INK0102AU1 , IRF630 , INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 .

History: INK0302AC1 | INK0210AP1 | 2SK3313 | TPP65R160C

Keywords - INK0103AC1 MOSFET datasheet

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