INK0112AU1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: INK0112AU1
   Marking Code: K7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SC-75A

INK0112AU1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

INK0112AU1 Datasheet (PDF)

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ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf

INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT

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ink011bap1.pdf