All MOSFET. INK0112AU1 Datasheet

 

INK0112AU1 MOSFET. Datasheet pdf. Equivalent

Type Designator: INK0112AU1

Marking Code: K7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 13 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: SC-75A

INK0112AU1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

INK0112AU1 Datasheet (PDF)

1.1. ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf Size:205K _update-mosfet

INK0112AU1
INK0112AU1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit:mm) INK0112AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE ① ・Input impedance is high, and not necessary to JEIT

4.1. ink011bap1.pdf Size:109K _update-mosfet

INK0112AU1
INK0112AU1



 5.1. ink0103ac1 ink0103am1 ink0103au1.pdf Size:150K _update-mosfet

INK0112AU1
INK0112AU1



5.2. ink0102ac1 ink0102am1 ink0102au1.pdf Size:153K _update-mosfet

INK0112AU1
INK0112AU1



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