INK0112AU1 Datasheet. Specs and Replacement
Type Designator: INK0112AU1 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SC-75A
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INK0112AU1 substitution
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INK0112AU1 datasheet
ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf
INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT... See More ⇒
Detailed specifications: INK0102AC1, INK0102AM1, INK0102AU1, INK0103AC1, INK0103AM1, INK0103AU1, INK0112AC1, INK0112AM1, AON7408, INK011BAP1, INK0200AC1, INK0210AC1, INK0210AP1, INK021AAP1, INK0302AC1, INK0310AP1, IVN5001ANE
Keywords - INK0112AU1 MOSFET specs
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History: SI4162DY | JMH65R110ACFDQ | SI4160DY | JMSH1516PE | JMSH1535AG | SI4166DY | JMH65R090PCFD
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