INK0310AP1 PDF and Equivalents Search

 

INK0310AP1 Specs and Replacement

Type Designator: INK0310AP1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC-62

INK0310AP1 substitution

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INK0310AP1 datasheet

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 ink0310ap1.pdf pdf_icon

INK0310AP1

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 ink0302ac1.pdf pdf_icon

INK0310AP1

INK0302AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INK0302AC1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. ... See More ⇒

Detailed specifications: INK0112AM1, INK0112AU1, INK011BAP1, INK0200AC1, INK0210AC1, INK0210AP1, INK021AAP1, INK0302AC1, AO3401, IVN5001ANE, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF

Keywords - INK0310AP1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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