All MOSFET. INK0310AP1 Datasheet

 

INK0310AP1 Datasheet and Replacement


   Type Designator: INK0310AP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SC-62
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INK0310AP1 Datasheet (PDF)

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INK0310AP1

 9.1. Size:148K  isahaya
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INK0310AP1

INK0302AC1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INK0302AC1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

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History: SI4816DY | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2

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