IVN5001ANE Specs and Replacement
Type Designator: IVN5001ANE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-237
IVN5001ANE substitution
- MOSFET ⓘ Cross-Reference Search
IVN5001ANE datasheet
ivn5000and ivn5000ane ivn5000anf ivn5000anh ivn5001and ivn5001ane ivn5001anf ivn5001anh.pdf
... See More ⇒
Detailed specifications: INK0112AU1, INK011BAP1, INK0200AC1, INK0210AC1, INK0210AP1, INK021AAP1, INK0302AC1, INK0310AP1, K3569, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF
Keywords - IVN5001ANE MOSFET specs
IVN5001ANE cross reference
IVN5001ANE equivalent finder
IVN5001ANE pdf lookup
IVN5001ANE substitution
IVN5001ANE replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
Popular searches
a940 transistor | 2sc1815 replacement | 2sc2383 | c3198 transistor | irfb3607pbf datasheet | 60n60 | 2n5485 equivalent | 2sa1941