IRC640PBF PDF and Equivalents Search

 

IRC640PBF Specs and Replacement

Type Designator: IRC640PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220-5

IRC640PBF substitution

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IRC640PBF datasheet

 ..1. Size:228K  international rectifier
 irc640 irc640pbf.pdf pdf_icon

IRC640PBF

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 9.1. Size:225K  international rectifier
 irc644 irc644pbf.pdf pdf_icon

IRC640PBF

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Detailed specifications: INK021AAP1, INK0302AC1, INK0310AP1, IVN5001ANE, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, K4145, IRC644PBF, IRC730PBF, IRC740PBF, IRC830PBF, IRC840PBF, IRCZ24, IRCZ24PBF, IRCZ34

Keywords - IRC640PBF MOSFET specs

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