IRC640PBF Datasheet and Replacement
Type Designator: IRC640PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220-5
IRC640PBF substitution
IRC640PBF Datasheet (PDF)
Datasheet: INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF , IRC630PBF , IRC634PBF , K4145 , IRC644PBF , IRC730PBF , IRC740PBF , IRC830PBF , IRC840PBF , IRCZ24 , IRCZ24PBF , IRCZ34 .
History: AP4501GH-HF
Keywords - IRC640PBF MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP4501GH-HF
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