All MOSFET. ISL9N302AP3 Datasheet

 

ISL9N302AP3 Datasheet and Replacement


   Type Designator: ISL9N302AP3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 345 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-220AB
 

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ISL9N302AP3 Datasheet (PDF)

 ..1. Size:121K  fairchild semi
 isl9n302ap3.pdf pdf_icon

ISL9N302AP3

January 2002ISL9N302AP3N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5VOptimized for switching applications,

 5.1. Size:249K  fairchild semi
 isl9n302as3st.pdf pdf_icon

ISL9N302AP3

April 2002ISL9N302AS3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10Vlow on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5VOptimized for switching applications, this

 7.1. Size:269K  fairchild semi
 isl9n303ap3.pdf pdf_icon

ISL9N302AP3

September 2002PWM OptimizedISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3N-Channel Logic Level UltraFET Trench MOSFETs30V, 75A, 3.2mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.004 (Typ), VGS =

 7.2. Size:843K  cn vbsemi
 isl9n306ad3s.pdf pdf_icon

ISL9N302AP3

ISL9N306AD3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETAB

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Datasheet: IRC644PBF , IRC730PBF , IRC740PBF , IRC830PBF , IRC840PBF , IRCZ24 , IRCZ24PBF , IRCZ34 , IRLB4132 , ISL9N302AS3ST , IVN5000AND , IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND , IVN5001ANF , IVN5001ANH .

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