IVN5000ANE Specs and Replacement
Type Designator: IVN5000ANE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-237
IVN5000ANE substitution
- MOSFET ⓘ Cross-Reference Search
IVN5000ANE datasheet
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Detailed specifications: IRC830PBF, IRC840PBF, IRCZ24, IRCZ24PBF, IRCZ34, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, STP80NF70, IVN5000ANF, IVN5000ANH, IVN5001AND, IVN5001ANF, IVN5001ANH, IXCP01N90E, IXCY01N90E, IPI70R950CE
Keywords - IVN5000ANE MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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