IVN5000ANF Specs and Replacement
Type Designator: IVN5000ANF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-237
IVN5000ANF substitution
- MOSFET ⓘ Cross-Reference Search
IVN5000ANF datasheet
ivn5000and ivn5000ane ivn5000anf ivn5000anh ivn5001and ivn5001ane ivn5001anf ivn5001anh.pdf
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Detailed specifications: IRC840PBF, IRCZ24, IRCZ24PBF, IRCZ34, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE, IRFP450, IVN5000ANH, IVN5001AND, IVN5001ANF, IVN5001ANH, IXCP01N90E, IXCY01N90E, IPI70R950CE, IPI05CN10N
Keywords - IVN5000ANF MOSFET specs
IVN5000ANF cross reference
IVN5000ANF equivalent finder
IVN5000ANF pdf lookup
IVN5000ANF substitution
IVN5000ANF replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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