IVN5001ANF Specs and Replacement
Type Designator: IVN5001ANF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-237
IVN5001ANF substitution
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IVN5001ANF datasheet
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Detailed specifications: IRCZ34 , ISL9N302AP3 , ISL9N302AS3ST , IVN5000AND , IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND , BS170 , IVN5001ANH , IXCP01N90E , IXCY01N90E , IPI70R950CE , IPI05CN10N , SCT3060AR , 2SK2071-01S , FIR4N65AFG .
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