IVN5001ANH Specs and Replacement
Type Designator: IVN5001ANH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-237
IVN5001ANH substitution
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IVN5001ANH datasheet
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Detailed specifications: ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE, IVN5000ANF, IVN5000ANH, IVN5001AND, IVN5001ANF, 4N60, IXCP01N90E, IXCY01N90E, IPI70R950CE, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E
Keywords - IVN5001ANH MOSFET specs
IVN5001ANH cross reference
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IVN5001ANH substitution
IVN5001ANH replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BRD840 | G06N10 | IPA086N10N3 | IXCY01N90E
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