All MOSFET. CPC3714C Datasheet

 

CPC3714C Datasheet and Replacement


   Type Designator: CPC3714C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 0.24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-89
 

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CPC3714C Datasheet (PDF)

 ..1. Size:124K  ixys
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CPC3714C

CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i

 7.1. Size:124K  ixys
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CPC3714C

CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

 8.1. Size:106K  ixys
cpc3710c.pdf pdf_icon

CPC3714C

CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance

 8.2. Size:106K  ixys
cpc3710.pdf pdf_icon

CPC3714C

CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

Datasheet: 9N90L-T47 , CPC3701 , CPC3701C , CPC3703 , CPC3703C , CPC3710 , CPC3710C , CPC3714 , IRFZ48N , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 , CPC5602C , CPC5603 , CPC5603C .

History: STD25NF10T4 | SML5020BN | FHP150N03C | STP180N4F6 | BUZ102 | PFF12N65 | SI4401DDY-T1-GE3

Keywords - CPC3714C MOSFET datasheet

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