CPC3720C
MOSFET. Datasheet pdf. Equivalent
Type Designator: CPC3720C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.6
V
|Id|ⓘ - Maximum Drain Current: 0.13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 22
Ohm
Package:
SOT-89
CPC3720C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CPC3720C
Datasheet (PDF)
..1. Size:106K ixys
cpc3720c.pdf 
CPC3720N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ
7.1. Size:105K ixys
cpc3720.pdf
CPC3720N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field BVDGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical
9.1. Size:97K ixys
cpc3703.pdf
CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
9.2. Size:124K ixys
cpc3714.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
9.3. Size:93K ixys
cpc3701.pdf
CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
9.4. Size:124K ixys
cpc3714c.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i
9.5. Size:149K ixys
cpc3703c.pdf
CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic
9.6. Size:106K ixys
cpc3710c.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance
9.7. Size:106K ixys
cpc3710.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
9.8. Size:93K ixys
cpc3701c.pdf
CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
9.9. Size:105K ixys
cpc3730.pdf
CPC3730N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an economical
9.10. Size:105K ixys
cpc3730c.pdf
CPC3730N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an econom
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