All MOSFET. CPC5603 Datasheet

 

CPC5603 Datasheet and Replacement


   Type Designator: CPC5603
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 415 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 85 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-223
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CPC5603 Datasheet (PDF)

 ..1. Size:106K  ixys
 cpc5603.pdf pdf_icon

CPC5603

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 0.1. Size:106K  ixys
 cpc5603c.pdf pdf_icon

CPC5603

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.1. Size:105K  ixys
 cpc5602c.pdf pdf_icon

CPC5603

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.2. Size:106K  ixys
 cpc5602.pdf pdf_icon

CPC5603

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

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History: VBNC1303 | IRFS4010PBF

Keywords - CPC5603 MOSFET datasheet

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