All MOSFET. NCV8401ADTRKG Datasheet

 

NCV8401ADTRKG Datasheet and Replacement


   Type Designator: NCV8401ADTRKG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 42 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: DPAK
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NCV8401ADTRKG Datasheet (PDF)

 ..1. Size:123K  onsemi
ncv8401a ncv8401adtrkg ncv8401dtrkg.pdf pdf_icon

NCV8401ADTRKG

NCV8401, NCV8401ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8401/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(C

 7.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8401ADTRKG

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

 8.1. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8401ADTRKG

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

 8.2. Size:92K  onsemi
ncv8402a ncv8402astt1g.pdf pdf_icon

NCV8401ADTRKG

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOB254L | LKK47-06C5 | TSM4424CS | 2SK3674-01SJ | FDN302P | IRFB3004GPBF | BRCS200P03DP

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