NCV8408 Datasheet. Specs and Replacement

Type Designator: NCV8408

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 42 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-252

NCV8408 substitution

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NCV8408 datasheet

 ..1. Size:98K  onsemi
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NCV8408

NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N-Channel, DPAK http //onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal prot... See More ⇒

 8.1. Size:122K  onsemi
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NCV8408

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(... See More ⇒

 8.2. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8408

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe... See More ⇒

 8.3. Size:92K  onsemi
ncv8402a ncv8402astt1g.pdf pdf_icon

NCV8408

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm... See More ⇒

Detailed specifications: NCV8401ADTRKG, NCV8401DTRKG, NCV8402A, NCV8402AD, NCV8402ASTT1G, NCV8403A, NCV8405A, NCV8406A, IRF9540, NCV8440A, NDB410AE, NDB410B, NDB410BE, NDB608AE, NDB608B, NDB608BE, NDB610AE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.