All MOSFET. NDB410BE Datasheet

 

NDB410BE Datasheet and Replacement


   Type Designator: NDB410BE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 11.6 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-263AB
 

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NDB410BE Datasheet (PDF)

 ..1. Size:57K  fairchild semi
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NDB410BE

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BENDB410A / NDB410AE / NDB410B / NDB410BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field9 and 8A, 100V. RDS(ON) = 0.25 and 0.30. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell density

Datasheet: NCV8402ASTT1G , NCV8403A , NCV8405A , NCV8406A , NCV8408 , NCV8440A , NDB410AE , NDB410B , K4145 , NDB608AE , NDB608B , NDB608BE , NDB610AE , NDB610B , NDB610BE , NDB708AE , NDB708B .

History: NCEP60T15G | IRF540NL

Keywords - NDB410BE MOSFET datasheet

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