NDB410BE PDF Specs and Replacement
Type Designator: NDB410BE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-263AB
NDB410BE substitution
NDB410BE PDF Specs
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May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density... See More ⇒
Detailed specifications: NCV8402ASTT1G , NCV8403A , NCV8405A , NCV8406A , NCV8408 , NCV8440A , NDB410AE , NDB410B , 2N7002 , NDB608AE , NDB608B , NDB608BE , NDB610AE , NDB610B , NDB610BE , NDB708AE , NDB708B .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
