NDB410BE Datasheet. Specs and Replacement

Type Designator: NDB410BE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-263AB

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NDB410BE datasheet

 ..1. Size:57K  fairchild semi
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NDB410BE

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density... See More ⇒

Detailed specifications: NCV8402ASTT1G, NCV8403A, NCV8405A, NCV8406A, NCV8408, NCV8440A, NDB410AE, NDB410B, IRF9540N, NDB608AE, NDB608B, NDB608BE, NDB610AE, NDB610B, NDB610BE, NDB708AE, NDB708B

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