All MOSFET. NDB710B Datasheet

 

NDB710B Datasheet and Replacement


   Type Designator: NDB710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-263AB
      - MOSFET Cross-Reference Search

 

NDB710B Datasheet (PDF)

 ..1. Size:58K  fairchild semi
 ndb710ae ndb710b ndb710be ndp710ae ndp710b ndp710be.pdf pdf_icon

NDB710B

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | NTD4855N-1G | DM12N65C | SPD04N60S5 | FCPF7N60YDTU | AP6679GI-HF

Keywords - NDB710B MOSFET datasheet

 NDB710B cross reference
 NDB710B equivalent finder
 NDB710B lookup
 NDB710B substitution
 NDB710B replacement

 

 
Back to Top

 


 
.