All MOSFET. NDB710B Datasheet

 

NDB710B Datasheet and Replacement


   Type Designator: NDB710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-263AB
 

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NDB710B Datasheet (PDF)

 ..1. Size:58K  fairchild semi
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NDB710B

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDB608BE , NDB610AE , NDB610B , NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , TK10A60D , NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z .

History: AFN3609S | KRF7301 | FDU8874 | CS6N70F | STN3414 | YJG90G10A | BUK9K18-40E

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