All MOSFET. NDBA170N06A Datasheet

 

NDBA170N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDBA170N06A
   Marking Code: 170N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 280 nC
   trⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-263

 NDBA170N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDBA170N06A Datasheet (PDF)

 ..1. Size:418K  onsemi
 ndba170n06a.pdf

NDBA170N06A NDBA170N06A

Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFEThttp://onsemi.com 60V, 170A, 3.3m, TO-263 Features On-resistance RDS(on)=2.5m(typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4)Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitG(1)V Drain to Sourc

 9.1. Size:616K  onsemi
 ndba100n10b.pdf

NDBA170N06A NDBA170N06A

NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m, 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 6.9 m@15V High Speed Switching 100V 100A 8.2 m@10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2, 4Absolute Maximum Ratings at Ta = 2

 9.2. Size:763K  onsemi
 ndba180n10b.pdf

NDBA170N06A NDBA170N06A

NDBA180N10B Power MOSFET www.onsemi.com 100V, 2.8m, 180A, N-ChannelVDSS RDS(on) Max ID MaxFeatures 2.8m@ 15V Ultra Low On-Resistance 100V 180A 3.3m@ 10V Low Gate Charge High Speed Switching 100% Avalanche Tested Electrical Connection Pb-Free, Halogen Free and RoHS Compliance N-Channel Specifications 2,4Absolute Maximum Ratings at

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History: IXFB44N100P

 

 
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