All MOSFET. NDD60N900U1 Datasheet

 

NDD60N900U1 MOSFET. Datasheet pdf. Equivalent

Type Designator: NDD60N900U1

Marking Code: 60N900U1G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 23 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: DPAK, IPAK

NDD60N900U1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD60N900U1 Datasheet (PDF)

1.1. ndd60n900u1.pdf Size:128K _onsemi

NDD60N900U1
NDD60N900U1

NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

4.1. ndd60n360u1.pdf Size:130K _onsemi

NDD60N900U1
NDD60N900U1

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel

4.2. ndd60n745u1.pdf Size:129K _onsemi

NDD60N900U1
NDD60N900U1

NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features • 100% Avalanche Tested http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

 4.3. ndd60n550u1.pdf Size:129K _onsemi

NDD60N900U1
NDD60N900U1

NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS ±25 V N-Channel

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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