NDP606B Datasheet. Specs and Replacement

Type Designator: NDP606B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO-220AB

NDP606B substitution

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NDP606B datasheet

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NDP606B

April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This... See More ⇒

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March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. ... See More ⇒

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NDP606B

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH) ... See More ⇒

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Detailed specifications: NDFPD1N150C, NDFPD1N150CG, NDP410AE, NDP410B, NDP410BE, NDP605A, NDP605B, NDP606A, 20N50, NDP608AE, NDP608B, NDP608BE, NDP610AE, NDP610B, NDP610BE, NDP708AE, NDP708B

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