All MOSFET. NDP710B Datasheet

 

NDP710B MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDP710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-220

 NDP710B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDP710B Datasheet (PDF)

 ..1. Size:58K  fairchild semi
 ndb710ae ndb710b ndb710be ndp710ae ndp710b ndp710be.pdf

NDP710B NDP710B

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQU3N60 | H5N2001LS | FRF9250R

 

 
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