All MOSFET. NDP710B Datasheet

 

NDP710B Datasheet and Replacement


   Type Designator: NDP710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-220
 

 NDP710B substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDP710B Datasheet (PDF)

 ..1. Size:58K  fairchild semi
 ndb710ae ndb710b ndb710be ndp710ae ndp710b ndp710be.pdf pdf_icon

NDP710B

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDP608BE , NDP610AE , NDP610B , NDP610BE , NDP708AE , NDP708B , NDP708BE , NDP710AE , IRFZ48N , NDP710BE , NDPL070N10B , NDPL070N10BG , NDPL100N10B , NDPL100N10BG , NDPL180N10B , NDPL180N10BG , NDS335N .

History: ST3401SRG

Keywords - NDP710B MOSFET datasheet

 NDP710B cross reference
 NDP710B equivalent finder
 NDP710B lookup
 NDP710B substitution
 NDP710B replacement

 

 
Back to Top

 


 
.