All MOSFET. NDP710B Datasheet

 

NDP710B Datasheet and Replacement


   Type Designator: NDP710B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-220
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NDP710B Datasheet (PDF)

 ..1. Size:58K  fairchild semi
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NDP710B

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AON6996 | MC08N005C | IRLR024 | CED05N8 | AUIRFSL6535 | AON6794 | BL10N70-A

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