NDPL070N10B Datasheet and Replacement
Type Designator: NDPL070N10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 840 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
Package: TO-220
NDPL070N10B substitution
NDPL070N10B Datasheet (PDF)
ndpl070n10b ndpl070n10bg.pdf

NDPL070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.8m, 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.8 m@15V Low Gate Charge 100V 70A 12.8 m@10V High Speed Switching 100% Avalanche Tested Pb-Free and RoHS Compliance Electrical Connection N-Channel Applications D(2)Specifications Absolute
Datasheet: NDP610B , NDP610BE , NDP708AE , NDP708B , NDP708BE , NDP710AE , NDP710B , NDP710BE , MMIS60R580P , NDPL070N10BG , NDPL100N10B , NDPL100N10BG , NDPL180N10B , NDPL180N10BG , NDS335N , NDS336P , NDS352P .
History: NCEP026N10T | BUZ103SL
Keywords - NDPL070N10B MOSFET datasheet
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History: NCEP026N10T | BUZ103SL



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