All MOSFET. NDPL180N10B Datasheet

 

NDPL180N10B Datasheet and Replacement


   Type Designator: NDPL180N10B
   Marking Code: 180N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 320 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-220
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NDPL180N10B Datasheet (PDF)

 ..1. Size:625K  onsemi
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NDPL180N10B

NDPL180N10B Power MOSFET www.onsemi.com 100V, 3.0m, 180A, N-Channel VDSS RDS(on) Max ID MaxFeatures 3.0m@ 15V Ultra Low On-Resistance 100V 180A 3.5m@ 10V Low Gate Charge High Speed Switching 100% Avalanche Test Pb-Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C Unit

 9.1. Size:613K  onsemi
 ndpl100n10b ndpl100n10bg.pdf pdf_icon

NDPL180N10B

NDPL100N10B Power MOSFET www.onsemi.com 100V, 7.2m, 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 7.2 m@15V High Speed Switching 100V 100A 8.7 m@10V 100% Avalanche Tested Pb-Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C 2Parameter Sy

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRF2807L | 2N7227 | 2N7125

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