All MOSFET. NP100N04MDH Datasheet

 

NP100N04MDH Datasheet and Replacement


   Type Designator: NP100N04MDH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO-220
 

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NP100N04MDH Datasheet (PDF)

 ..1. Size:355K  renesas
 np100n04mdh np100n04ndh np100n04pdh.pdf pdf_icon

NP100N04MDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:353K  renesas
 np100n04muh np100n04nuh np100n04puh.pdf pdf_icon

NP100N04MDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:224K  renesas
 np100n04puk.pdf pdf_icon

NP100N04MDH

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Sep 23, 2011Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for

 6.2. Size:216K  renesas
 np100n04nuj.pdf pdf_icon

NP100N04MDH

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 13, 2011Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H

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Datasheet: NDUL03N150CG , NDUL09N150C , NDUL09N150CG , NID9N05ACLT4G , NID9N05CLT4G , NILMS4501NR2 , NILMS4501NR2G , NMSD200B01-7 , IRFZ44 , NP100N04MUH , NP100N04NDH , NP100N04NUH , NP100N04NUJ , NP100N04PDH , NP100N04PUH , NP100N04PUK , NP100N055MDH .

History: SW2N60B

Keywords - NP100N04MDH MOSFET datasheet

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