NP100N055NUH PDF and Equivalents Search

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) Designed for... See More ⇒

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒