NP109N04PUJ Datasheet. Specs and Replacement

Type Designator: NP109N04PUJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO-263

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NP109N04PUJ datasheet

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NP109N04PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP109N04PUJ

Preliminary Data Sheet R07DS0544EJ0100 NP109N04PUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7200 pF TYP. (VDS = 25 V) Designed for ... See More ⇒

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NP109N04PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP109N04PUJ

Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for ... See More ⇒

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Detailed specifications: NP100N055PDH, NP100N055PUH, NP100N055PUK, NP100P04PDG, NP100P04PLG, NP100P06PDG, NP100P06PLG, NP109N04PUG, AON7408, NP109N04PUK, NP109N055PUJ, NP109N055PUK, NP110N03PUG, NP110N04PDG, NP110N04PUG, NP110N04PUJ, NP110N04PUK

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