NP110N04PDG Datasheet and Replacement
Type Designator: NP110N04PDG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 124 nS
Cossⓘ - Output Capacitance: 1360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO-263
NP110N04PDG substitution
NP110N04PDG Datasheet (PDF)
np110n04pdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04pug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04puj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04puk.pdf

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a
Datasheet: NP100P06PDG , NP100P06PLG , NP109N04PUG , NP109N04PUJ , NP109N04PUK , NP109N055PUJ , NP109N055PUK , NP110N03PUG , IRF4905 , NP110N04PUG , NP110N04PUJ , NP110N04PUK , NP110N055PUG , NP110N055PUJ , NP110N055PUK , NP15P04SLG , NP15P06SLG .
History: WMO60N04T1 | SSF6014 | SI6466ADQ | WMS032N04LG2 | SSF5NS70UF | KMB4D8DN55Q | IRFBA1405PPBF
Keywords - NP110N04PDG MOSFET datasheet
NP110N04PDG cross reference
NP110N04PDG equivalent finder
NP110N04PDG lookup
NP110N04PDG substitution
NP110N04PDG replacement
History: WMO60N04T1 | SSF6014 | SI6466ADQ | WMS032N04LG2 | SSF5NS70UF | KMB4D8DN55Q | IRFBA1405PPBF



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