NP110N04PDG Datasheet. Specs and Replacement

Type Designator: NP110N04PDG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 124 nS

Cossⓘ - Output Capacitance: 1360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-263

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NP110N04PDG datasheet

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NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP110N04PDG

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 17, 2011 Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a... See More ⇒

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Detailed specifications: NP100P06PDG, NP100P06PLG, NP109N04PUG, NP109N04PUJ, NP109N04PUK, NP109N055PUJ, NP109N055PUK, NP110N03PUG, IRF4905, NP110N04PUG, NP110N04PUJ, NP110N04PUK, NP110N055PUG, NP110N055PUJ, NP110N055PUK, NP15P04SLG, NP15P06SLG

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