All MOSFET. NP110N04PDG Datasheet

 

NP110N04PDG Datasheet and Replacement


   Type Designator: NP110N04PDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 124 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO-263
 

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NP110N04PDG Datasheet (PDF)

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NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:263K  renesas
np110n04pug.pdf pdf_icon

NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:310K  renesas
np110n04puj.pdf pdf_icon

NP110N04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.3. Size:104K  renesas
np110n04puk.pdf pdf_icon

NP110N04PDG

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a

Datasheet: NP100P06PDG , NP100P06PLG , NP109N04PUG , NP109N04PUJ , NP109N04PUK , NP109N055PUJ , NP109N055PUK , NP110N03PUG , IRF4905 , NP110N04PUG , NP110N04PUJ , NP110N04PUK , NP110N055PUG , NP110N055PUJ , NP110N055PUK , NP15P04SLG , NP15P06SLG .

History: WMO60N04T1 | SSF6014 | SI6466ADQ | WMS032N04LG2 | SSF5NS70UF | KMB4D8DN55Q | IRFBA1405PPBF

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