All MOSFET. NP110N055PUJ Datasheet

 

NP110N055PUJ Datasheet and Replacement


   Type Designator: NP110N055PUJ
   Marking Code: 110N055UJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-263
 

 NP110N055PUJ substitution

   - MOSFET ⓘ Cross-Reference Search

 

NP110N055PUJ Datasheet (PDF)

 ..1. Size:311K  renesas
np110n055puj.pdf pdf_icon

NP110N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.1. Size:268K  renesas
np110n055pug.pdf pdf_icon

NP110N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.2. Size:101K  renesas
np110n055puk.pdf pdf_icon

NP110N055PUJ

Preliminary Data Sheet NP110N055PUK R07DS0591EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo

 7.1. Size:243K  renesas
np110n04pdg.pdf pdf_icon

NP110N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NP109N055PUJ | BSC054N04NSG | STD105N10F7AG | FX50SMJ-2

Keywords - NP110N055PUJ MOSFET datasheet

 NP110N055PUJ cross reference
 NP110N055PUJ equivalent finder
 NP110N055PUJ lookup
 NP110N055PUJ substitution
 NP110N055PUJ replacement

 

 
Back to Top

 


 
.