NP160N04TUJ Datasheet PDF and Equivalents Search

 ..1. Size:195K  renesas
 np160n04tuj.pdf

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe... See More ⇒

 4.1. Size:356K  renesas
 np160n04tug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.2. Size:228K  renesas
 np160n04tuk.pdf

Preliminary Data Sheet R07DS0543EJ0100 NP160N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f... See More ⇒

 5.1. Size:365K  renesas
 np160n04tdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒