NP160N055TUJ Datasheet. Specs and Replacement

Type Designator: NP160N055TUJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 760 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-263-7

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NP160N055TUJ datasheet

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NP160N055TUJ

Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Desig... See More ⇒

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NP160N055TUJ

Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for... See More ⇒

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NP160N055TUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP160N055TUJ

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe... See More ⇒

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Detailed specifications: NP110N055PUJ, NP110N055PUK, NP15P04SLG, NP15P06SLG, NP160N04TDG, NP160N04TUG, NP160N04TUJ, NP160N04TUK, IRF1010E, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL, NP180N04TUG, NP180N04TUJ, NP180N04TUK, NP180N055TUJ

Keywords - NP160N055TUJ MOSFET specs

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