All MOSFET. NP160N055TUJ Datasheet

 

NP160N055TUJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP160N055TUJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-263-7

 NP160N055TUJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP160N055TUJ Datasheet (PDF)

 ..1. Size:207K  renesas
 np160n055tuj.pdf

NP160N055TUJ NP160N055TUJ

Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Desig

 3.1. Size:102K  renesas
 np160n055tuk.pdf

NP160N055TUJ NP160N055TUJ

Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

 7.1. Size:365K  renesas
 np160n04tdg.pdf

NP160N055TUJ NP160N055TUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:195K  renesas
 np160n04tuj.pdf

NP160N055TUJ NP160N055TUJ

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

 7.3. Size:356K  renesas
 np160n04tug.pdf

NP160N055TUJ NP160N055TUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.4. Size:228K  renesas
 np160n04tuk.pdf

NP160N055TUJ NP160N055TUJ

Preliminary Data Sheet R07DS0543EJ0100NP160N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF7477 | IPP60R600C6

 

 
Back to Top