NP180N04TUG Datasheet. Specs and Replacement

Type Designator: NP180N04TUG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO-263-7

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NP180N04TUG datasheet

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NP180N04TUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP180N04TUG

Preliminary Data Sheet R07DS0180EJ0100 NP180N04TUJ Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒

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NP180N04TUG

Preliminary Data Sheet R07DS0542EJ0100 NP180N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed... See More ⇒

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NP180N04TUG

Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 22, 2010 Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒

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Detailed specifications: NP160N04TUG, NP160N04TUJ, NP160N04TUK, NP160N055TUJ, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL, NCEP15T14, NP180N04TUJ, NP180N04TUK, NP180N055TUJ, NP180N055TUK, NP20N10YDF, NP20P04SLG, NP20P06SLG, NP20P06YLG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.