NP20P04SLG Datasheet. Specs and Replacement
Type Designator: NP20P04SLG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252
NP20P04SLG substitution
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NP20P04SLG datasheet
np20p04slg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np20p06ylg.pdf
Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Apr 17, 2012 Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 47 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 64 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 70 m ... See More ⇒
np20p06slg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: NP16N04YUG, NP16N06YLL, NP180N04TUG, NP180N04TUJ, NP180N04TUK, NP180N055TUJ, NP180N055TUK, NP20N10YDF, BS170, NP20P06SLG, NP20P06YLG, NP22N055HHE, NP22N055HLE, NP22N055IHE, NP22N055ILE, NP22N055SHE, NP22N055SLE
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