All MOSFET. NP22N055SHE Datasheet

 

NP22N055SHE Datasheet and Replacement


   Type Designator: NP22N055SHE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-252
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NP22N055SHE Datasheet (PDF)

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NP22N055SHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:289K  renesas
 np22n055hle np22n055ile np22n055sle.pdf pdf_icon

NP22N055SHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: FDD6637F085 | IRLR024 | AON6794 | MC08N005C | SFF11N80M | CED05N8 | BL10N70-A

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