All MOSFET. NP32N055HDE Datasheet

 

NP32N055HDE Datasheet and Replacement


   Type Designator: NP32N055HDE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-251
 

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NP32N055HDE Datasheet (PDF)

 ..1. Size:288K  renesas
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NP32N055HDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:289K  renesas
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NP32N055HDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:287K  renesas
np32n055hhe np32n055ihe np32n055she.pdf pdf_icon

NP32N055HDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:1348K  cn vbsemi
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NP32N055HDE

NP32N055Iwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not

Datasheet: NP22N055HLE , NP22N055IHE , NP22N055ILE , NP22N055SHE , NP22N055SLE , NP23N06YDG , NP28N10SDE , NP30N04QUK , CS150N03A8 , NP32N055HHE , NP32N055HLE , NP32N055IDE , NP32N055IHE , NP32N055ILE , NP32N055SDE , NP32N055SHE , NP32N055SLE .

History: IRLZ34NSPBF | SJMN600R70MF | IRFB4310PBF | IRFR7746PBF | SSF6NS70F | IRFR3303PBF | IRFB4110GPBF

Keywords - NP32N055HDE MOSFET datasheet

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