NP36N055SLE
MOSFET. Datasheet pdf. Equivalent
Type Designator: NP36N055SLE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO-252
NP36N055SLE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP36N055SLE
Datasheet (PDF)
..1. Size:282K renesas
np36n055hle np36n055ile np36n055sle.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:281K renesas
np36n055hhe np36n055ihe np36n055she.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:250K renesas
np36n10sde.pdf
Preliminary Data Sheet R07DS0508EJ0100NP36N10SDE Rev.1.00Sep 21, 2011MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 3500
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