NP40N055EHE MOSFET. Datasheet pdf. Equivalent
Type Designator: NP40N055EHE
Marking Code: 40N055HE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 9.2 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-263
NP40N055EHE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP40N055EHE Datasheet (PDF)
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201100 V 40 A N-channel Power MOS FET Rev.2.01Application: Automotive May 13, 2013Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y
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