NP40N055ELE Datasheet. Specs and Replacement
Type Designator: NP40N055ELE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-263
NP40N055ELE substitution
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NP40N055ELE datasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201 100 V 40 A N-channel Power MOS FET Rev.2.01 Application Automotive May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y... See More ⇒
Detailed specifications: NP36P04SDG, NP36P06KDG, NP36P06SLG, NP40N055CHE, NP40N055CLE, NP40N055DHE, NP40N055DLE, NP40N055EHE, IRF540, NP40N055KHE, NP40N055KLE, NP40N055MHE, NP40N055MLE, NP40N055NHE, NP40N055NLE, NP40N10PDF, NP40N10VDF
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