NP48N055EHE
MOSFET. Datasheet pdf. Equivalent
Type Designator: NP48N055EHE
Marking Code: 48N055HE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
TO-263
NP48N055EHE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP48N055EHE
Datasheet (PDF)
..1. Size:297K renesas
np48n055che np48n055dhe np48n055ehe np48n055khe np48n055mhe np48n055nhe.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:299K renesas
np48n055cle np48n055dle np48n055ele np48n055kle np48n055mle np48n055nle.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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