NP50P04SDG MOSFET. Datasheet pdf. Equivalent

   Type Designator: NP50P04SDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-252

NP50P04SDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NP50P04SDG Datasheet (PDF)

..1. Size:312K renesas
np50p04sdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

6.1. Size:233K renesas
np50p04slg.pdf

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo

7.1. Size:283K renesas
np50p04kdg.pdf

8.1. Size:230K renesas
np50p03ydg.pdf

Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200Rev.2.00MOS FIELD EFFECT TRANSISTOR Mar 16, 2011Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design

8.2. Size:302K renesas
np50p06sdg.pdf