VN1210N1 Specs and Replacement

Type Designator: VN1210N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-3

VN1210N1 substitution

- MOSFET ⓘ Cross-Reference Search

 

VN1210N1 datasheet

Detailed specifications: IXFP8N85X, IXFA36N20X3, IXFP36N20X3, IXTP12N70X2, VN1204N5, VN1210N5, VN1204N1, VN1206N1, RFP50N06, VN1204N2, VN1206N2, NP60N04PDK, NP60N04VDK, NP60N04VUK, NP60N055KUG, NP60N055MUK, NP60N055NUK

Keywords - VN1210N1 MOSFET specs

 VN1210N1 cross reference

 VN1210N1 equivalent finder

 VN1210N1 pdf lookup

 VN1210N1 substitution

 VN1210N1 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs