VN1210N1 Specs and Replacement
Type Designator: VN1210N1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3
VN1210N1 substitution
- MOSFET ⓘ Cross-Reference Search
VN1210N1 datasheet
Detailed specifications: IXFP8N85X, IXFA36N20X3, IXFP36N20X3, IXTP12N70X2, VN1204N5, VN1210N5, VN1204N1, VN1206N1, RFP50N06, VN1204N2, VN1206N2, NP60N04PDK, NP60N04VDK, NP60N04VUK, NP60N055KUG, NP60N055MUK, NP60N055NUK
Keywords - VN1210N1 MOSFET specs
VN1210N1 cross reference
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VN1210N1 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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