NP60N04VDK Datasheet and Replacement

Preliminary Data Sheet NP60N04VDK R07DS1014EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 24, 2011Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Des

Preliminary Data Sheet NP60N04PDK R07DS1013EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.