NP60N055NUK MOSFET. Datasheet pdf. Equivalent
Type Designator: NP60N055NUK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-262
NP60N055NUK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP60N055NUK Datasheet (PDF)
np60n055muk np60n055nuk.pdf
Preliminary Data Sheet NP60N055MUK, NP60N055NUK R07DS0598EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) D
np60n055vuk.pdf
Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for au
np60n055kug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n04kug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n03sug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n04mug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n04muk np60n04nuk.pdf
Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Des
np60n04vdk.pdf
Preliminary Data Sheet NP60N04VDK R07DS1014EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF
np60n04pdk.pdf
Preliminary Data Sheet NP60N04PDK R07DS1013EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF
np60n03kug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n04vuk.pdf
Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 24, 2011Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut
np60n04hlf np60n04ilf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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