NP80N055NHE MOSFET. Datasheet pdf. Equivalent
Type Designator: NP80N055NHE
Marking Code: 80N055HE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 380 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: TO-262
NP80N055NHE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP80N055NHE Datasheet (PDF)
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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