NP82N04NDG Datasheet and Replacement
Type Designator: NP82N04NDG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 580 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO-262
- MOSFET Cross-Reference Search
NP82N04NDG Datasheet (PDF)
np82n04mdg np82n04ndg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np82n04mlg np82n04nlg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np82n04mug np82n04nug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np82n04pdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PB5A2BX | IXTX120P20T | AP3P7R0EMT | PV628DA | PD6B2BA | VSE003N04MSC-G | GSM3452
Keywords - NP82N04NDG MOSFET datasheet
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History: PB5A2BX | IXTX120P20T | AP3P7R0EMT | PV628DA | PD6B2BA | VSE003N04MSC-G | GSM3452



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