All MOSFET. NP83P04PDG Datasheet

 

NP83P04PDG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP83P04PDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 83 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO-263

 NP83P04PDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP83P04PDG Datasheet (PDF)

 ..1. Size:291K  renesas
 np83p04pdg.pdf

NP83P04PDG NP83P04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:291K  renesas
 np83p06pdg.pdf

NP83P04PDG NP83P04PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: APT60M75PVR | FDMA3028N

 

 
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