NP88N04EHE Datasheet and Replacement
Type Designator: NP88N04EHE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO-263
- MOSFET Cross-Reference Search
NP88N04EHE Datasheet (PDF)
np88n04che np88n04dhe np88n04ehe np88n04khe np88n04mhe np88n04nhe.pdf

NP88N04CHEDATA SHEETMOS FIELD EFFECT TRANSISTORNP88N04EHE, NP88N04KHENP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHESWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP88N04EHE-E1-AY Note1, 2
np88n04kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np88n04nug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np88n03kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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History: ME7636 | IXFN48N50 | PHW9N60E | STK2NA60 | 2SK3089 | MTB12N03J3 | ASDM30P11TD-R
Keywords - NP88N04EHE MOSFET datasheet
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History: ME7636 | IXFN48N50 | PHW9N60E | STK2NA60 | 2SK3089 | MTB12N03J3 | ASDM30P11TD-R



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